SEMICONDUCTOR PRESSURE SENSOR AND PRESSURE SENSING DEVICE

Title:

SEMICONDUCTOR PRESSURE SENSOR AND PRESSURE SENSING DEVICE

Document Type and Number:

WIPO Patent Application WO/2001/014842

Kind Code:

A1

Abstract:

A pressure sensor produced by etching a sacrificial layer. The sensor has an etching channel sealing structure which is excellent in water nonpermeability and the diaphragm of which hardly changes with time. The sensor is excellent in productivity and durability. A very small cavity is made by etching a sacrificial layer, and then a silicon oxide layer is deposited by, e.g., CVD to seal an etching channel. A water-nonpermeable thin film of polysilicon is formed covering the silicon oxide layer. The etching channel sealing structure of the pressure sensor is simplified, water is prevented from entering the cavity to enhance the moisture resistance. The change in shape with time of the diaphragm is suppressed because the sealing material has a small film stress.

Inventors:

SATO SHINYA (JP)
SHIMADA SATOSHI (JP)
WATANABE ATSUO (JP)
ONOSE YASUO (JP)
KURYU SEIJI (JP)
MIYAZAKI ATSUSHI (JP)
HORIE JUNICHI (JP)
MONMA NAOHIRO (JP)

Application Number:

PCT/JP1999/004485

Publication Date:

March 01, 2001

Filing Date:

August 20, 1999

Export Citation:

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Assignee:

HITACHI LTD (JP)
HITACHI CAR ENG CO LTD (JP)
SATO SHINYA (JP)
SHIMADA SATOSHI (JP)
WATANABE ATSUO (JP)
ONOSE YASUO (JP)
KURYU SEIJI (JP)
MIYAZAKI ATSUSHI (JP)
HORIE JUNICHI (JP)
MONMA NAOHIRO (JP)

International Classes:

B81B3/00; B81B7/00; G01L7/08; G01L9/00; H01L21/00; (IPC1-7): G01L9/12; H01L29/84

Foreign References:

JPH10300610A	1998-11-13
JPH09257618A	1997-10-03
JPH1131825A	1999-02-02
JPH10111195A	1998-04-28
US4665610A	1987-05-19

Other References: