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Title:
SEMICONDUCTOR PRESSURE SENSOR
Document Type and Number:
WIPO Patent Application WO/2007/052800
Kind Code:
A1
Abstract:
It is possible to provide a low-cost semiconductor pressure sensor of a simple structure capable of easily controlling, for example, the thickness of its diaphragm portion, and having a high yield, a low dependence on temperature, and a high sensitivity. The semiconductor pressure sensor comprises a Schottky barrier diode (10) consisting of a barrier film (1), an electrode film (2), and an n-type semiconductor substrate (3), and a base (4). In the Schottky barrier diode (10), the barrier film (1) formed of a metal is brought into contact with the n-type semiconductor substrate (3), so that a depletion layer is formed in the contact area on the side of the n-type semiconductor substrate (3) and a Schottky barrier is generated. This Schottky junction portion is included in the diaphragm portion (5) in the n-type semiconductor substrate (3) and functions as a pressure sensing area.

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Inventors:
IGAKI MASARU (JP)
SHIKATA HIDEAKI (JP)
Application Number:
PCT/JP2006/322127
Publication Date:
May 10, 2007
Filing Date:
November 07, 2006
Export Citation:
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Assignee:
ROHM CO LTD (JP)
IGAKI MASARU (JP)
SHIKATA HIDEAKI (JP)
International Classes:
G01L9/00; H01L29/84
Foreign References:
JPH05172672A1993-07-09
JPH033370A1991-01-09
JPH04209575A1992-07-30
JPS60124878A1985-07-03
JPS4745397B1
JPS5563877A1980-05-14
JPS4812675B11973-04-21
Attorney, Agent or Firm:
MIYOSHI, Hidekazu et al. (2-8 Toranomon 1-chom, Minato-ku Tokyo 01, JP)
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