Title:
SEMICONDUCTOR PRESSURE SENSOR
Document Type and Number:
WIPO Patent Application WO/2017/073207
Kind Code:
A1
Abstract:
Provided is a semiconductor pressure sensor, wherein: the semiconductor pressure sensor is provided with a semiconductor substrate having a diaphragm part, a plurality of piezoresistors formed on the surface of the diaphragm part, a plurality of wirings that connect the plurality of piezoresistors to constitute part of a bridge circuit, an insulation film formed so as to cover the surface of the semiconductor substrate including the surfaces of the plurality of piezoresistors, and an electroconductive film having a plurality of electroconductive regions independently formed on the insulation film correspondingly with respect to the plurality of piezoresistors; at least one of the electroconductive regions being connected to a first end or a second end of one of the piezoresistors.
Inventors:
TAKAYAMA NAOKI (JP)
Application Number:
PCT/JP2016/077850
Publication Date:
May 04, 2017
Filing Date:
September 21, 2016
Export Citation:
Assignee:
FUJIKURA LTD (JP)
International Classes:
G01L9/00; H01L29/84
Foreign References:
| US20020003274A1 | 2002-01-10 | |||
| JPS63147846U | 1988-09-29 | |||
| JP2012002646A | 2012-01-05 | |||
| JP2014206514A | 2014-10-30 |
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
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