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Title:
SEMICONDUCTOR PRODUCTION DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2002/031231
Kind Code:
A1
Abstract:
A semiconductor production device for carrying out by one production device a plurality of processes including a plating process, an annealing process and two CMP processes to thereby shorten a TAT, and for replacing CMP processes with other processes to thereby reduce costs of expendables, the device comprising an electroplating chamber (11) for electroplating a substrate (91), an electrolytic polishing chamber (21) for electrolytic-polishing the substrate, a carrying device (83) for carrying the substrate into/out of the electroplating chamber and the electrolytic polishing chamber, and a carrying chamber (81) connected to the electroplating chamber and the electrolytic polishing chamber respectively, the carrying chamber being able to be connected with an electoless plating chamber, an annealing chamber, a liquid treating chamber, etc.

Inventors:
NOGAMI TAKESHI (JP)
KOMAI NAOKI (JP)
Application Number:
PCT/JP2001/008981
Publication Date:
April 18, 2002
Filing Date:
October 12, 2001
Export Citation:
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Assignee:
SONY CORP (JP)
NOGAMI TAKESHI (JP)
KOMAI NAOKI (JP)
International Classes:
B24B37/04; C25D5/02; C23C18/16; C25D7/12; C25D17/00; C25D19/00; C25F3/30; H01L21/00; H01L21/288; H01L21/306; H01L21/3063; H01L21/3205; H01L21/321; H01L21/768; H01L23/52; H01L23/532; (IPC1-7): C25D17/00; C25F3/12
Foreign References:
JPS511326A1976-01-08
JPH02217498A1990-08-30
Attorney, Agent or Firm:
Nakamura, Tomoyuki c/o Miyoshi International Patent Office 9th Floor (Toranomon Daiichi Building 2-3 Toranomon 1-chome Minato-ku, Tokyo, JP)
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