SEMICONDUCTOR SENSOR DEVICE AND METHOD FOR MANUFACTURING SAME

Title:

SEMICONDUCTOR SENSOR DEVICE AND METHOD FOR MANUFACTURING SAME

Document Type and Number:

WIPO Patent Application WO/2008/029654

Kind Code:

A1

Abstract:

Provided is a semiconductor sensor device which is manufactured by an MEMS technology wherein machining technology and/or material technology is combined with semiconductor technology for detecting and measuring various physical quantities. In the semiconductor sensor device, cracks which generate in a cap chip and a molding resin are eliminated and airtightness between a semiconductor sensor chip and the cap chip is ensured. The cracks due to vibration applied when being cut can be eliminated by having the circumference side surface of the cap chip as a wet-etched surface. Furthermore, insulation is ensured by coating the cap chip side surface with an insulating protection film.

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Inventors:

AONO TAKANORI (JP)
OKADA RYOJI (JP)
KAZAMA ATSUSHI (JP)
TAKADA YOSHIAKI (JP)

Application Number:

PCT/JP2007/066552

Publication Date:

March 13, 2008

Filing Date:

August 27, 2007

Export Citation:

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Assignee:

HITACHI METALS LTD (JP)
AONO TAKANORI (JP)
OKADA RYOJI (JP)
KAZAMA ATSUSHI (JP)
TAKADA YOSHIAKI (JP)

International Classes:

H01L23/02; G01P15/08; G01P15/12; H01L21/306; H01L29/84

Foreign References:

JP2004506327A	2004-02-26
JP2003188296A	2003-07-04
JP2006128648A	2006-05-18
JP2006133123A	2006-05-25
JPH08233851A	1996-09-13
JPH11160348A	1999-06-18
JP2006175554A	2006-07-06
JP2003194545A	2003-07-09
JP2005524077A	2005-08-11
JP2004132947A	2004-04-30
JPH1098201A	1998-04-14
JPH032535A	1991-01-08
JPH10170380A	1998-06-26

Other References: