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Title:
SEMICONDUCTOR SENSOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2008/029654
Kind Code:
A1
Abstract:
Provided is a semiconductor sensor device which is manufactured by an MEMS technology wherein machining technology and/or material technology is combined with semiconductor technology for detecting and measuring various physical quantities. In the semiconductor sensor device, cracks which generate in a cap chip and a molding resin are eliminated and airtightness between a semiconductor sensor chip and the cap chip is ensured. The cracks due to vibration applied when being cut can be eliminated by having the circumference side surface of the cap chip as a wet-etched surface. Furthermore, insulation is ensured by coating the cap chip side surface with an insulating protection film.

Inventors:
AONO, Takanori (LTD. Advanced Electronics Research Laboratory 5200, Mikajiri, Kumagaya-sh, Saitama 43, 3600843, JP)
青野 宇紀 (〒43 埼玉県熊谷市三ケ尻5200番地 日立金属株式会社 先端エレクトロニクス研究所内 Saitama, 3600843, JP)
OKADA, Ryoji (LTD. Advanced Electronics Research Laboratory 5200, Mikajiri, Kumagaya-sh, Saitama 43, 3600843, JP)
岡田 亮二 (〒43 埼玉県熊谷市三ケ尻5200番地 日立金属株式会社 先端エレクトロニクス研究所内 Saitama, 3600843, JP)
Application Number:
JP2007/066552
Publication Date:
March 13, 2008
Filing Date:
August 27, 2007
Export Citation:
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Assignee:
HITACHI METALS, LTD. (2-1 Shibaura 1-chome, Minato-ku Tokyo, 14, 1058614, JP)
日立金属株式会社 (〒14 東京都港区芝浦一丁目2番1号 Tokyo, 1058614, JP)
AONO, Takanori (LTD. Advanced Electronics Research Laboratory 5200, Mikajiri, Kumagaya-sh, Saitama 43, 3600843, JP)
青野 宇紀 (〒43 埼玉県熊谷市三ケ尻5200番地 日立金属株式会社 先端エレクトロニクス研究所内 Saitama, 3600843, JP)
OKADA, Ryoji (LTD. Advanced Electronics Research Laboratory 5200, Mikajiri, Kumagaya-sh, Saitama 43, 3600843, JP)
International Classes:
H01L23/02; G01P15/08; G01P15/12; H01L21/306; H01L29/84
Attorney, Agent or Firm:
MORITA, Hiroshi (Kaimei Patent Office, Sankyo Central Plaza Building 5F 11-8, Nishi-Nippori 5-chome, Arakawa-k, Tokyo 13, 1160013, JP)
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