SEMICONDUCTOR SENSOR AND PLATING METHOD FOR SEMICONDUCTOR DEVICE

Title:

SEMICONDUCTOR SENSOR AND PLATING METHOD FOR SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2004/059722

Kind Code:

A1

Abstract:

A method for plating a semiconductor wafer with a plating film of uniform thickness at low cost while preventing the back of the wafer from being plated and preventing the wafer from being contaminated at the later steps. The method is characterized in that when a connection terminal is directly formed on an Al electrode of a semiconductor wafer, electroless plating is conducted while covering the back of the wafer with an insulator. The insulator is preferably a glass substrate which is a constituent component of a product. A semiconductor sensor having, on a semiconductor substrate, an improved corrosion resistance against a corrosive medium is also disclosed. The semiconductor sensor comprises a structure portion and an electricity quantity transducer for sensing a physical quantity or a chemical component of a corrosive medium and a pad portion serving as a lead-out terminal for an electric signal generated. The pad portion is protected with a noble metal.

Inventors:

TANAKA HIROAKI (JP)
TOYODA INAO (JP)
WATANABE YOSHIFUMI (JP)
KONDO ICHIHARU (JP)
SHINYAMA KEIJI (JP)
ABE YOSITUGU (JP)

Application Number:

PCT/JP2003/016625

Publication Date:

July 15, 2004

Filing Date:

December 24, 2003

Export Citation:

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Assignee:

DENSO CORP (JP)
TANAKA HIROAKI (JP)
TOYODA INAO (JP)
WATANABE YOSHIFUMI (JP)
KONDO ICHIHARU (JP)
SHINYAMA KEIJI (JP)
ABE YOSITUGU (JP)

International Classes:

C23C18/16; C23C18/34; C23C18/42; G01F1/34; G01F1/692; G01F15/00; G01L9/00; H01L23/485; (IPC1-7): H01L21/60; H01L21/288; H01L21/3205; H01L29/84; C23C18/16

Foreign References:

JPH09292298A	1997-11-11
JPS62144368A	1987-06-27
JP2001304999A	2001-10-31
JPS57136132A	1982-08-23
JPH03101139A	1991-04-25
EP1006576A1	2000-06-07

Other References: