Title:
SEMICONDUCTOR SINTERED COMPACT, ELECTRIC/ELECTRONIC MEMBER, AND METHOD FOR PRODUCING SEMICONDUCTOR SINTERED COMPACT
Document Type and Number:
WIPO Patent Application WO/2018/212297
Kind Code:
A1
Abstract:
Disclosed is a semiconductor sintered compact including a polycrystal, wherein: the polycrystal includes magnesium silicide or an alloy including magnesium silicide; the average grain size of crystal grains constituting the polycrystal is 1 µm or less; and the electric conductivity is 10,000 S/m or greater.
Inventors:
SADAYORI NAOKI (JP)
Application Number:
PCT/JP2018/019161
Publication Date:
November 22, 2018
Filing Date:
May 17, 2018
Export Citation:
Assignee:
NITTO DENKO CORP (JP)
International Classes:
H01L35/14; B82Y30/00; H01L35/34
Domestic Patent References:
| WO2014118959A1 | 2014-08-07 | |||
| WO2017057237A1 | 2017-04-06 |
Foreign References:
| JP2016528716A | 2016-09-15 | |||
| JP2016131232A | 2016-07-21 | |||
| US20140360546A1 | 2014-12-11 | |||
| JP2017100107A | 2017-06-08 | |||
| JP2017100108A | 2017-06-08 | |||
| JP2017199057A | 2017-11-02 |
Other References:
BUX ET AL., ADV. FUNCT, MATER., vol. 19, 2009, pages 2445 - 2452
ARAI ET AL., MRS PROCEEDINGS, vol. 1490, 2013, pages 63 - 68
See also references of EP 3627573A4
ARAI ET AL., MRS PROCEEDINGS, vol. 1490, 2013, pages 63 - 68
See also references of EP 3627573A4
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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