Title:
SEMICONDUCTOR SOLID BATTERY
Document Type and Number:
WIPO Patent Application WO/2018/117235
Kind Code:
A1
Abstract:
This semiconductor solid battery is characterized in that a first insulating layer is provided between an N-type semiconductor and a P-type semiconductor. Preferably, the first insulating layer has a film thickness of not less than 3 nm and not more than 30 μm, and a specific permittivity of not more than 10. Preferably, the first insulating layer has a film density that is not less than 60% of a bulk body. Preferably, the semiconductor layer introduces a captured electric potential. The semiconductor solid battery eliminates leakage of electrolytic solution.
Inventors:
SASAKI ATSUYA (JP)
SASAKI AKITO (JP)
KATAOKA YOSHINORI (JP)
HIRABAYASHI HIDEAKI (JP)
SAITO SHUICHI (JP)
SASAKI AKITO (JP)
KATAOKA YOSHINORI (JP)
HIRABAYASHI HIDEAKI (JP)
SAITO SHUICHI (JP)
Application Number:
PCT/JP2017/046002
Publication Date:
June 28, 2018
Filing Date:
December 21, 2017
Export Citation:
Assignee:
TOSHIBA KK (JP)
TOSHIBA MATERIALS CO LTD (JP)
TOSHIBA MATERIALS CO LTD (JP)
International Classes:
H01L49/00
Domestic Patent References:
| WO2012046325A1 | 2012-04-12 |
Foreign References:
| JP2016014128A | 2016-01-28 | |||
| JP2015195335A | 2015-11-05 |
Attorney, Agent or Firm:
KURATA, Masatoshi et al. (JP)
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