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Patent Searching and Data


Title:
SEMICONDUCTOR STORAGE DEVICE, ELECTRONIC APPARATUS, AND INFORMATION READING METHOD
Document Type and Number:
WIPO Patent Application WO/2019/111525
Kind Code:
A1
Abstract:
[Problem] To provide a semiconductor storage device which operates appropriately when arrayed in a memory cell, while avoiding a voltage drop due to an oxide film formed on a surface of a semiconductor substrate. [Solution] This semiconductor storage device is provided with: a first transistor; a capacitor comprising a pair of capacitor electrodes opposing each other with an insulator therebetween, one of the capacitor electrodes being electrically connected to the gate electrode of the first transistor; a second transistor of which one of the source or drain is electrically connected to one of the source or drain of the first transistor and to the other of the capacitor electrodes; and a plate wire electrically connected to the gate electrode of the first transistor and to one of the capacitor electrodes.

Inventors:
TSUKAMOTO MASANORI (JP)
Application Number:
PCT/JP2018/037648
Publication Date:
June 13, 2019
Filing Date:
October 10, 2018
Export Citation:
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Assignee:
SONY SEMICONDUCTOR SOLUTIONS CORP (JP)
International Classes:
H01L27/1159; G11C11/22; H01L21/336; H01L21/8242; H01L27/108; H01L29/788; H01L29/792
Foreign References:
JP2014503930A2014-02-13
JP2014175480A2014-09-22
JP2001203277A2001-07-27
JPH0340298A1991-02-21
JP2007042172A2007-02-15
Attorney, Agent or Firm:
KAMEYA, Yoshiaki (JP)
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