SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURING METHOD

Title:

SEMICONDUCTOR STORAGE DEVICE AND ITS MANUFACTURING METHOD

Document Type and Number:

WIPO Patent Application WO/2004/021441

Kind Code:

A1

Abstract:

A drain (7) comprises a lightly-doped shallow impurity region (7a) aligned with a control gate (5) and a heavily-doped deep impurity region (7b) aligned with a side wall film (8) and doped with impurities at a concentration higher than that of the lightly-doped shallow impurity region (7a). The lightly-doped shallow impurity region (7a) leads to improvement of the short-channel effect and programming efficiently. A drain contact hole forming portion (70) is provided to the heavily-doped impurity region (7b) to reduce the contact resistance at the drain (7).

Inventors:

KOMORI HIDEKI (JP)
SHIMADA HISAYUKI (JP)
SUN YU (US)
KINOSHITA HIROYUKI (US)

Application Number:

PCT/JP2003/011108

Publication Date:

March 11, 2004

Filing Date:

August 29, 2003

Export Citation:

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Assignee:

FUJITSU LTD (JP)
FASL LLC (US)
ADVANCED MICRO DEVICES INC (US)
KOMORI HIDEKI (JP)
SHIMADA HISAYUKI (JP)
SUN YU (US)
KINOSHITA HIROYUKI (US)

International Classes:

H01L21/336; H01L21/8234; H01L21/8247; H01L27/115; H01L27/11521; H01L27/11531; H01L27/11568; H01L29/788; H01L29/792; (IPC1-7): H01L27/10; H01L29/788; H01L29/792; H01L21/8247

Foreign References:

US20010008786A1	2001-07-19
JP2000196037A	2000-07-14
US5079603A	1992-01-07
US5672529A	1997-09-30
US20020098652A1	2002-07-25
JPH11317503A	1999-11-16
US20010008786A1	2001-07-19
US5672529A	1997-09-30
JPH11317503A	1999-11-16

Other References: