SEMICONDUCTOR STORAGE DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR STORAGE DEVICE, AND ELECTRONIC INSTRUMENT

Title:

SEMICONDUCTOR STORAGE DEVICE, MANUFACTURING METHOD FOR SEMICONDUCTOR STORAGE DEVICE, AND ELECTRONIC INSTRUMENT

Document Type and Number:

WIPO Patent Application WO/2019/171884

Kind Code:

A1

Abstract:

[Problem] To provide a semiconductor storage device and an electronic instrument, the semiconductor storage device comprising a ferroelectric capacitor having a more optimized structure as a memory cell. [Solution] A semiconductor storage device comprising: a field effect transistor provided in an active region of a semiconductor substrate; a ferroelectric capacitor having a first capacitor electrode and a second capacitor electrode that hold a ferroelectric film therebetween, the first capacitor electrode being electrically connected to one of the source or the drain of the field effect transistor; a source line electrically connected to the second capacitor electrode of the ferroelectric capacitor; and a bit line electrically connected to the other of the source or the drain of the field effect transistor. A gate electrode of the field effect transistor extends beyond the active region in a first direction, and the source line and the bit line extend in a second direction perpendicular to the first direction.

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Inventors:

TSUKAMOTO MASANORI (JP)

Application Number:

PCT/JP2019/004769

Publication Date:

September 12, 2019

Filing Date:

February 12, 2019

Export Citation:

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Assignee:

SONY SEMICONDUCTOR SOLUTIONS CORP (JP)

International Classes:

H01L27/11507; H01L21/768; H01L27/11504

Foreign References:

JP2006019571A	2006-01-19
JP2011066062A	2011-03-31
JP2001267520A	2001-09-28
JP2007520069A	2007-07-19
JP2006049566A	2006-02-16

Attorney, Agent or Firm:

SAKAI INTERNATIONAL PATENT OFFICE (JP)

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