Title:
SEMICONDUCTOR STORAGE DEVICE AND MEMORY SYSTEM
Document Type and Number:
WIPO Patent Application WO/2015/037088
Kind Code:
A1
Abstract:
[Problem] To perform data readout at a low voltage without reducing reliability. [Solution] A sense amplifier is provided with a memory string that includes memory cells, a bit line electrically connected to one end of the memory string, and a sense amplifier which is electrically connected to the bit line and which performs sensing. The sense amplifier comprises: a first transistor for which one end is electrically connected to a first node upon an electrical current path of the bit line, and for which the other end is electrically connected to a second node; a second transistor which is electrically connected between the second node and a sense node; and a third transistor for which a gate is connected to the first node, and which is electrically connected between the second node and a voltage-adjustable third node.
Inventors:
YOSHIHARA MASAHIRO (JP)
ABIKO NAOFUMI (JP)
ABIKO NAOFUMI (JP)
Application Number:
PCT/JP2013/074579
Publication Date:
March 19, 2015
Filing Date:
September 11, 2013
Export Citation:
Assignee:
TOSHIBA KK (JP)
International Classes:
G11C16/06; G11C16/02; G11C16/04
Foreign References:
| JP2011258289A | 2011-12-22 | |||
| JP2013012267A | 2013-01-17 | |||
| JP2011159355A | 2011-08-18 |
Attorney, Agent or Firm:
KATSUNUMA Hirohito et al. (JP)
Katsunuma Hirohito (JP)
Katsunuma Hirohito (JP)
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