Title:
SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR FORMING A PROFILE OF A CAPACITOR THEREOF
Document Type and Number:
WIPO Patent Application WO/2019/007373
Kind Code:
A1
Abstract:
The present disclosure provide a method for forming a capacitor profile on a semiconductor. The method may include: providing a semiconductor substrate; forming a dielectric layer on the semiconductor substrate; forming an ion reflecting mask layer on the dielectric layer; forming a plurality of patterned openings by etching through the ion reflecting mask layer to expose the dielectric layer; and forming a plurality of trenching capacitor profiles by etching through the dielectric layer from the plurality of patterned openings, respectively, to expose the semiconductor substrate, wherein each trenching capacitor profile includes a bowing profile formed at 75%-95% of a height of the trenching capacitor profile above the semiconductor substrate.
Inventors:
ZHU RONGFU (CN)
Application Number:
PCT/CN2018/094525
Publication Date:
January 10, 2019
Filing Date:
July 04, 2018
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108; H01L23/64
Foreign References:
| US20170186837A1 | 2017-06-29 | |||
| CN107331655A | 2017-11-07 | |||
| CN105932012A | 2016-09-07 | |||
| CN105609403A | 2016-05-25 | |||
| CN104253019A | 2014-12-31 | |||
| CN102543964A | 2012-07-04 | |||
| US20040129961A1 | 2004-07-08 | |||
| US20150102395A1 | 2015-04-16 |
Attorney, Agent or Firm:
METIS IP (CHENGDU) LLC (CN)
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