Title:
SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2012/008067
Kind Code:
A1
Abstract:
Disclosed is a semiconductor storage device (100) which has: a plurality of bit line diffusion layers (108) which are formed to extend in parallel to each other in the upper portion of a P-type semiconductor substrate (101); and a plurality of word line electrodes (110) which are respectively formed to extend parallel to each other in the direction that intersects the bit line diffusion layers (108) on the semiconductor substrate (101). Furthermore, in a region below the word line electrodes (110) on the semiconductor substrate (101), a plurality of P-type third impurity layers (111A) having a concentration lower than that of the periphery are formed in a self-aligned manner.
Inventors:
TAKAHASHI, Nobuyoshi (())
高橋信義 (())
高橋信義 (())
Application Number:
JP2011/000642
Publication Date:
January 19, 2012
Filing Date:
February 04, 2011
Export Citation:
Assignee:
PANASONIC CORPORATION (1006, Oaza Kadoma Kadoma-sh, Osaka 01, 〒5718501, JP)
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
TAKAHASHI, Nobuyoshi (())
パナソニック株式会社 (〒01 大阪府門真市大字門真１００６番地 Osaka, 〒5718501, JP)
TAKAHASHI, Nobuyoshi (())
International Classes:
H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Attorney, Agent or Firm:
MAEDA, Hiroshi et al. (Osaka-Marubeni Bldg, 5-7Hommachi 2-chome, Chuo-ku, Osaka-sh, Osaka 53, 〒5410053, JP)
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Claims: