Title:
SEMICONDUCTOR STORAGE DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2016/157334
Kind Code:
A1
Abstract:
In this semiconductor storage device, which is formed by film-forming a phase changing material layer on a channel semiconductor layer of a transistor, and which needs to flow a current between the channel semiconductor layer and the phase changing material layer when operating, a surface is nitrided after discontinuously forming a metal layer on the channel semiconductor layer, thereby film-forming an interface layer in contact with both the channel layer and the phase changing material layer. The interface layer has: island-like laminated sections, which are dispersedly and discontinuously formed of the metal layer and nitride metal layer; and a nitride semiconductor layer that is formed in regions having no island-like laminated section. With such configuration, low contact resistance between the channel semiconductor layer and the phase changing material layer, and suppression of mutual diffusion of materials between the channel semiconductor layer and the phase changing material layer are both achieved at one time.
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Inventors:
SASAGO YOSHITAKA (JP)
YOSHITAKE HIROSHI (JP)
KUROTSUCHI KENZO (JP)
KOBAYASHI TAKASHI (JP)
YOSHITAKE HIROSHI (JP)
KUROTSUCHI KENZO (JP)
KOBAYASHI TAKASHI (JP)
Application Number:
PCT/JP2015/059766
Publication Date:
October 06, 2016
Filing Date:
March 27, 2015
Export Citation:
Assignee:
HITACHI LTD (JP)
International Classes:
H01L27/105; H01L45/00
Domestic Patent References:
| WO2014188484A1 | 2014-11-27 | |||
| WO2013183101A1 | 2013-12-12 |
Foreign References:
| JP2011114016A | 2011-06-09 |
Attorney, Agent or Firm:
SEIRYO I. P. C. (JP)
青稜 patent business corporation (JP)
青稜 patent business corporation (JP)
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