Title:
SEMICONDUCTOR STORAGE DEVICE AND METHOD OF WRITING THERETO
Document Type and Number:
WIPO Patent Application WO/2017/022700
Kind Code:
A1
Abstract:
This semiconductor storage device comprises: a memory cell (121) that includes a control electrode (122), a floating electrode (123), a source (124), and a drain (125); a switch (30) for connecting the control electrode and the drain; a source driver (14) for applying a prescribed voltage to the source; a current source (20) for supplying a prescribed current to the source; a drain driver (16) for applying a prescribed voltage to the drain; a voltage measurement circuit (22) for measuring a voltage generated between the control electrode and the source; and a control electrode driver (18) for applying a prescribed voltage to the control electrode. When writing data to the memory cell, the voltage measurement circuit measures the voltage generated between the control electrode and the source when a prescribed current flows from the current source to the memory cell in a state where the switch is turned on, and on the basis of the measured voltage, the control electrode driver applies the controlled voltage to the control electrode.
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Inventors:
KAI YOSHIHIDE (JP)
Application Number:
PCT/JP2016/072463
Publication Date:
February 09, 2017
Filing Date:
August 01, 2016
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
G11C16/02; G11C16/06
Foreign References:
| JP2009151912A | 2009-07-09 | |||
| JP2011519110A | 2011-06-30 | |||
| JP2000113686A | 2000-04-21 | |||
| JP2001091599A | 2001-04-06 |
Attorney, Agent or Firm:
JIN Shunji (JP)
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