Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2008/032549
Kind Code:
A1
Abstract:
Provided is a data writing method for reading stored data at first and then performing
a writing action. By a write data selecting circuit for switching the data to
be written in an SRAM cell, the write data from the outside is written in the SRAM
cell selected with a column address, and the stored data of the SRAM cell itself
is written back in the SRAM cell unselected with the column address. This constitution
makes it possible to arrange the memory cells of the different column addresses
adjacent to each other.
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Inventors:
TAKEDA KOICHI (JP)
Application Number:
PCT/JP2007/066509
Publication Date:
March 20, 2008
Filing Date:
August 21, 2007
Export Citation:
Assignee:
NEC CORP (JP)
TAKEDA KOICHI (JP)
TAKEDA KOICHI (JP)
International Classes:
G11C11/413
Foreign References:
| JP2005275382A | 2005-10-06 | |||
| JPS63205890A | 1988-08-25 |
Attorney, Agent or Firm:
IKEDA, Noriyasu et al. (4-10 Nishishinbashi 1-chom, Minato-ku Tokyo 03, JP)
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