Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/183101
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a semiconductor storage device, which has small resistance in the ON state, and a small leak current in the OFF state, and which has a small-sized selection transistor used therein. In this semiconductor storage device, a channel of a first selection transistor that selects a memory cell array is electrically connected to each of the adjacent memory cell arrays (see fig. 1).
Inventors:
SASAGO YOSHITAKA (JP)
Application Number:
PCT/JP2012/064368
Publication Date:
December 12, 2013
Filing Date:
June 04, 2012
Export Citation:
Assignee:
HITACHI LTD (JP)
SASAGO YOSHITAKA (JP)
SASAGO YOSHITAKA (JP)
International Classes:
H01L27/105; G11C13/00; H01L45/00
Domestic Patent References:
| WO2012070096A1 | 2012-05-31 | |||
| WO2012032730A1 | 2012-03-15 |
Foreign References:
| JP2010165982A | 2010-07-29 | |||
| JP2007180389A | 2007-07-12 | |||
| JP2012084676A | 2012-04-26 |
Attorney, Agent or Firm:
HIRAKI Yusuke et al. (JP)
Yusuke Hiraki (JP)
Yusuke Hiraki (JP)
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