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Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/113829
Kind Code:
A1
Abstract:
To achieve a semiconductor device wherein phase change memory having a three-dimensional laminated structure does not lose information even if the memory is exposed to a solder reflow temperature, and does not need an additional manufacture step and an additional boost power supply necessary for driving. In order to achieve the semiconductor device, in phase change memory constituting a user data region, a voltage supply is applied to a memory cell of a lower layer, said voltage supply being to be used for the purpose of increasing the resistance of a phase change element formed in a memory cell of a laminated structure upper layer, and the phase change element is broken.

Inventors:
YOSHITAKE HIROSHI (JP)
SASAGO YOSHITAKA (JP)
KUROTSUCHI KENZO (JP)
MINEMURA HIROYUKI (JP)
Application Number:
PCT/JP2015/050568
Publication Date:
July 21, 2016
Filing Date:
January 13, 2015
Export Citation:
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Assignee:
HITACHI LTD (JP)
International Classes:
H01L27/105; G11C13/00; G11C17/14; H01L27/10
Domestic Patent References:
WO2007046128A12007-04-26
WO2014188484A12014-11-27
Foreign References:
JP2008181633A2008-08-07
JP2008522400A2008-06-26
Attorney, Agent or Firm:
INOUE Manabu et al. (JP)
Manabu Inoue (JP)
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