Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2018/088137
Kind Code:
A1
Abstract:
The present invention provides a semiconductor storage device with a dual-port SRAM cell that has a small area while allowing low current consumption and securing an ample static noise margin. The semiconductor storage device includes a memory cell circuit (10) constituting a dual-port SRAM cell made up of six transistors. When driving either a first word line (WLA) or a second word line (WLB), a word line driving circuit (20) sets the high-level voltage (V1) output to the word line to a level lower than the high-level voltage (V2) that is output to both the first and second word lines (WLA, WLB) when driving both.
Inventors:
MORIWAKI SHINICHI
Application Number:
PCT/JP2017/037378
Publication Date:
May 17, 2018
Filing Date:
October 16, 2017
Export Citation:
Assignee:
SOCIONEXT INC (JP)
International Classes:
G11C11/412; G11C11/418
Foreign References:
| JP2006127669A | 2006-05-18 | |||
| JP2007066493A | 2007-03-15 | |||
| JPS6276092A | 1987-04-08 | |||
| JPS60111394A | 1985-06-17 |
Attorney, Agent or Firm:
MAEDA & PARTNERS (JP)
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