Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/264476
Kind Code:
A1
Abstract:
This semiconductor storage device has a first memory cell group to an eighth memory cell group that are arranged along a first direction; a first word line extending in the first direction; and a first sense amplifier group to an eighth sense amplifier group that are capable of supplying a voltage respectively to the first memory cell group to the eighth memory cell group. The first memory cell group to the eighth memory cell group each have a plurality of memory cells and a plurality of bit lines respectively connected to the plurality of memory cells. When a program voltage is supplied to the first word line in a write operation, the first sense amplifier group supplies a first voltage to a bit line connected to a memory cell to be written among a plurality of memory cells of the first memory cell group, and the second sense amplifier group supplies a second voltage, which is different from the first voltage, to a bit line connected to a memory cell to be written among a plurality of memory cells of the second memory cell group.
Inventors:
FUNATSUKI RIEKO (JP)
MAEDA TAKASHI (JP)
MAEDA TAKASHI (JP)
Application Number:
PCT/JP2022/002679
Publication Date:
December 22, 2022
Filing Date:
January 25, 2022
Export Citation:
Assignee:
KIOXIA CORP (JP)
International Classes:
G11C16/24; G11C16/04; H01L21/336; H01L27/11582; H01L29/788; H01L29/792
Foreign References:
| JP2016170836A | 2016-09-23 |
Attorney, Agent or Firm:
TAKAHASHI, HAYASHI AND PARTNER PATENT ATTORNEYS, INC. (JP)
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