Title:
SEMICONDUCTOR STORAGE ELEMENT AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2017/179314
Kind Code:
A1
Abstract:
[Problem] To provide a semiconductor storage element and an electronic device wherein the reliability of stored information can be improved.
[Solution] A semiconductor storage element comprising: a first transistor including a gate insulating film at least a portion of which is made of a ferroelectric material; a second transistor with either a source or a drain connected to the gate of the first transistor; and a third transistor with either a source or a drain connected to the drain of the first transistor. The semiconductor storage elements are arranged in a matrix. Each second and third transistor has the gate connected to a word line and has the other of the source or the drain connected to a bit line.
More Like This:
| JP4664392 | Semiconductor memory |
| JP2009099235 | SEMICONDUCTOR MEMORY DEVICE |
| WO/2023/033987 | THREE-DIMENSIONAL NOR MEMORY STRING ARRAYS OF THIN-FILM FERROELECTRIC TRANSISTORS |
Inventors:
TSUKAMOTO MASANORI (JP)
Application Number:
PCT/JP2017/007108
Publication Date:
October 19, 2017
Filing Date:
February 24, 2017
Export Citation:
Assignee:
SONY CORP (JP)
International Classes:
G11C11/22; H01L21/8246; H01L27/105
Foreign References:
| JP2001084759A | 2001-03-30 | |||
| JP2003197869A | 2003-07-11 | |||
| JPH0278098A | 1990-03-19 | |||
| JPH11162160A | 1999-06-18 | |||
| JP2001043694A | 2001-02-16 | |||
| JP2001168296A | 2001-06-22 | |||
| JPH10256494A | 1998-09-25 |
Attorney, Agent or Firm:
KAMEYA, Yoshiaki et al. (JP)
Download PDF: