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Title:
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREFOR, AND WAFER BONDING METHOD
Document Type and Number:
WIPO Patent Application WO/2023/070860
Kind Code:
A1
Abstract:
The embodiments of the present disclosure provide a semiconductor structure and a forming method therefor, and a wafer bonding method. The forming method for the semiconductor structure comprises: providing a wafer on which a semiconductor device is formed; forming a blind hole in the wafer; depositing a first metal material in the blind hole to form a through silicon via; and removing the first metal material deposited on the surface of the wafer, and planarizing the surface of the wafer.

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Inventors:
GAO YUANHAO (CN)
Application Number:
PCT/CN2021/137465
Publication Date:
May 04, 2023
Filing Date:
December 13, 2021
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/48; H01L21/18; H01L21/768; H01L23/48; H01L23/544
Foreign References:
CN109686657A2019-04-26
CN110379790A2019-10-25
US8076234B12011-12-13
CN103000571A2013-03-27
US20120074584A12012-03-29
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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