Title:
SEMICONDUCTOR STRUCTURE AND FORMING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2024/040771
Kind Code:
A1
Abstract:
A method for forming a semiconductor structure, comprising: forming a substrate, the substrate comprising a base, the base having a first device region and a second device region, the surface of the base in the first device region being covered by a first gate dielectric layer, and the surface of the base in the second device region being covered by a second gate dielectric layer, the thickness of the first gate dielectric layer being less than the thickness of the second gate dielectric layer, the surface of the first gate dielectric layer and the surface of the second gate dielectric layer being covered by a high-K dielectric layer, and the second gate dielectric layer being formed by means of a positive development or negative development process using a first photomask; removing the high-K dielectric layer in the second device region by means of a negative development or positive development process using the first photomask, so as to expose the second gate dielectric layer; and forming a first gate structure on the surface of the high-K dielectric layer in the first device region, and forming a second gate structure on the surface of the second gate dielectric layer in the second device region. The forming method has a simple process, can reduce costs, and can ensure the stability of the device.
Inventors:
WANG MENGMENG (CN)
SHEN YUTONG (CN)
SHEN YUTONG (CN)
Application Number:
PCT/CN2022/134057
Publication Date:
February 29, 2024
Filing Date:
November 24, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/28
Foreign References:
| CN104217935A | 2014-12-17 | |||
| US20060246651A1 | 2006-11-02 | |||
| CN105226023A | 2016-01-06 | |||
| US7074664B1 | 2006-07-11 |
Attorney, Agent or Firm:
SHANGHAI WINSUN INTELLECTUAL PROPERTY AGENCY (CN)
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