Title:
SEMICONDUCTOR STRUCTURE FOR GATE ALL AROUND NANOSHEET DEVICE
Document Type and Number:
WIPO Patent Application WO/2023/197202
Kind Code:
A1
Abstract:
For GAA nanosheet devices, a semiconductor structure (100) and fabrication method is provided. The semiconductor structure (100) comprises a substrate (101), a gate stack on the substrate (101) with a plurality of gate regions (103) and silicon-based channel regions (102) alternatingly arranged one on the other. A length of the gate regions (103) is smaller than a length of the channel regions (102). Thus, pockets (104) are formed on a side of the gate stack, each pocket (104) being arranged next to one gate region (103) and between the two channel regions (102) adjacent to the gate region (103). Further, a silicon-based first contact region (105) extends in a distance to the side of the gate stack, and a silicon-based filler material (106) is arranged between the first contact region (105) and the first side of the gate stack and in each first pocket (104).
Inventors:
BHUWALKA KRISHNA KUMAR (BE)
CHEN YIJIAN (CN)
CHEN YIJIAN (CN)
Application Number:
PCT/CN2022/086579
Publication Date:
October 19, 2023
Filing Date:
April 13, 2022
Export Citation:
Assignee:
HUAWEI TECH CO LTD (CN)
International Classes:
H01L29/06; H01L29/78
Foreign References:
| CN113725277A | 2021-11-30 | |||
| CN113113491A | 2021-07-13 | |||
| CN113113493A | 2021-07-13 | |||
| CN113113359A | 2021-07-13 | |||
| CN113517277A | 2021-10-19 | |||
| CN113809157A | 2021-12-17 |
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