Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
SEMICONDUCTOR STRUCTURE HAVING CONTINUOUS SPACERS AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/090426
Kind Code:
A1
Abstract:
A semiconductor structure having continuous spacers and manufacturing method therefor, and an electronic device having such a semiconductor structure. The semiconductor structure comprises: a substrate (1001); a plurality of fins (201) formed on the substrate and extending along a first direction; a plurality of gate stacks (203-1, 203-1') formed on the substrate and extending along a second direction crossing the first direction and dummy gates 203-2 extending along the second direction and consisting of dielectrics, wherein the gate stacks intersect with at least one fin; spacers (205) formed on sidewalls of the gate stacks and the dummy gates; and dielectrics (1019) formed between first gate stacks (203-1) and second gate stacks (203-1') in the second direction to electrically isolate the first gate stacks (203-1) from the second gate stacks (203-1'), wherein the spacers of the first gate stacks and the second gate stacks extend integrally, the dielectrics are provided within a space enclosed by the integrally extending spacers of the first gate stacks and the second gate stacks, and at least part of intervals between the first gate stacks and the second gate stacks in the second direction are smaller than linear intervals implemented by photoetching in the manufacturing process of the semiconductor structure.

Inventors:
ZHU HUILONG (US)
ZHANG YANBO (CN)
ZHONG HUICAI (CN)
Application Number:
PCT/CN2016/111274
Publication Date:
May 24, 2018
Filing Date:
December 21, 2016
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
INST OF MICROELECTRONICS CAS (CN)
International Classes:
H01L29/78; H01L21/336; H01L21/28; H01L29/423
Foreign References:
CN104681563A2015-06-03
CN104681557A2015-06-03
CN105633079A2016-06-01
US9093376B22015-07-28
Attorney, Agent or Firm:
CHINA SCIENCE PATENT & TRADEMARK AGENT LTD. (CN)
Download PDF: