Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/183653
Kind Code:
A1
Abstract:
The present invention relates to a semiconductor structure and a manufacturing method therefor. The manufacturing method for a semiconductor structure comprises: providing a substrate, the substrate comprising an active region and an isolation region; forming a first trench structure on the substrate, the first trench structure passing through the active region and the isolation region; forming a bit line contact structure in the first trench structure, the upper surface of the bit line contact structure being lower than the upper surface of the substrate; forming a bit line structure on the bit line contact structure, the bit line structure being at least partially located in the first trench structure; forming a bit line protection structure on the bit line structure, the bit line protection structure covering at least the upper surface of the bit line structure, and a second trench structure being provided between every two adjacent bit line protection structures; and forming a capacitor contact structure, the capacitor contact structure comprising a first capacitor contact structure and a second capacitor contact structure, wherein the second capacitor contact structure covers the upper surface and a part of the side wall of the first capacitor contact structure.
Inventors:
YU YEXIAO (CN)
LIU ZHONGMING (CN)
FANG JIA (CN)
CHEN LONGYANG (CN)
LIU ZHONGMING (CN)
FANG JIA (CN)
CHEN LONGYANG (CN)
Application Number:
PCT/CN2021/105153
Publication Date:
September 09, 2022
Filing Date:
July 08, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108
Foreign References:
| CN113035872A | 2021-06-25 | |||
| CN209216973U | 2019-08-06 | |||
| CN111799261A | 2020-10-20 | |||
| CN110890365A | 2020-03-17 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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