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Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/188309
Kind Code:
A1
Abstract:
The present application provides a semiconductor structure and a manufacturing method therefor. The manufacturing method comprises: providing a substrate; and forming a first material layer and a second material layer on the substrate, and performing heat treatment on the first material layer and the second material layer, to convert the first material layer into an ohmic contact layer and convert the second material layer into an ion barrier layer.

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Inventors:
WANG ZIJIE (CN)
XIA HUAN (CN)
WEI JUN (CN)
GAO YUANHAO (CN)
Application Number:
PCT/CN2021/103679
Publication Date:
September 15, 2022
Filing Date:
June 30, 2021
Export Citation:
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Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L21/768; H01L27/108
Domestic Patent References:
WO2020149933A12020-07-23
Foreign References:
CN113035776A2021-06-25
CN103633093A2014-03-12
CN110800083A2020-02-14
CN110391247A2019-10-29
CN101312152A2008-11-26
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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