Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2022/205679
Kind Code:
A1
Abstract:
The embodiments of the present application relate to a semiconductor structure and a manufacturing method therefor. The manufacturing method comprises: providing a substrate; forming gate trenches in the substrate, wherein the gate trenches comprise a first trench and a second trench, the second trench is located above the first trench and is in communication with the first trench, and the width of the second trench is larger than that of the first trench; and forming gate lines within the gate trenches.
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Inventors:
YU YEXIAO (CN)
Application Number:
PCT/CN2021/106660
Publication Date:
October 06, 2022
Filing Date:
July 16, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108; H01L21/8242
Foreign References:
| CN113097149A | 2021-07-09 | |||
| CN107134486A | 2017-09-05 | |||
| US20080042186A1 | 2008-02-21 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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