SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

Title:

SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREFOR

Document Type and Number:

WIPO Patent Application WO/2024/065889

Kind Code:

A1

Abstract:

Embodiments of the present invention relate to the technical field of semiconductors, and provide a semiconductor structure and a manufacturing method therefor. The semiconductor structure comprises: a substrate and a magnetic tunnel junction located on the substrate, wherein the direction from the substrate to the magnetic tunnel junction is a first direction, in a direction perpendicular to the first direction, the magnetic tunnel junction comprises a reference layer, a tunneling layer, a free layer, and a coverage layer which are arranged in sequence, the reference layer, the tunneling layer, the free layer, and the coverage layer all extend in the first direction, a magnetic moment direction of the reference layer is the first direction, and a spin magnetic moment direction of the free layer is changed in a plane parallel to the first direction; and a first data line, which is in contact with and connected to the coverage layer and is configured to control the spin magnetic moment direction of the free layer by means of the coverage layer. The embodiments of the present invention at least facilitate the improvement of the layout direction of film layers in a magnetic tunnel junction, so as to expand the space for change of a spin magnetic moment direction of a free layer, thereby facilitating the improvement of the electrical performance of the magnetic tunnel junction.

More Like This:

WO/2004/079743	MAGNETOSTATICALLY COUPLED MAGNETIC ELEMENTS UTILIZING SPIN TRANSFER AND AN MRAM DEVICE USING THE MAGNETIC ELEMENT
WO/2021/075343	MAGNETIC DEVICE AND COMPUTING APPARATUS
WO/2021/206996	METHODS FOR TREATING MAGNESIUM OXIDE FILM

Inventors:

ZHENG YUHONG (CN)
WANG XIAOGUANG (CN)
XU HANDONG (CN)

Application Number:

PCT/CN2022/125424

Publication Date:

April 04, 2024

Filing Date:

October 14, 2022

Export Citation:

Click for automatic bibliography generation Help

Assignee:

CHANGXIN MEMORY TECH INC (CN)

International Classes:

G11C11/16

Foreign References:

CN109841646A	2019-06-04
US20140175577A1	2014-06-26
US20150021675A1	2015-01-22
US20190207084A1	2019-07-04
KR20090114681A	2009-11-04

Attorney, Agent or Firm:

SHANGHAI CHENHAO INTELLECTUAL PROPERTY LAW FIRM GENERAL PARTNERSHIP (CN)

Download PDF:

View/Download PDF PDF Help

Previous Patent: DEEP-SEA TEMPERATURE PROFILE INVERSION METHOD AND SYSTEM BASED ON DEPTH-KEEPING DATA

Next Patent: WIRELESS COMMUNICATION METHOD, TERMINAL DEVICE, AND NETWORK DEVICE