Title:
SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD FOR SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2024/031769
Kind Code:
A9
Abstract:
Embodiments of the present disclosure relate to the field of semiconductors, and provide a semiconductor structure and a manufacturing method for the semiconductor structure. The semiconductor structure comprises: a substrate; an interposer soldered on the upper surface of the substrate; a power management chip soldered on the upper surface of the interposer; and a storage module located on the upper surface of the interposer, wherein the storage module comprises a plurality of storage chips stacked in a first direction, and the first direction is parallel to the upper surface of the interposer; each storage chip is internally provided with a power supply signal line, one of the plurality of storage chips is provided with at least a power supply wiring layer, and the power supply wiring layer is electrically connected to the power supply signal line; and the power management chip is further electrically connected to the power supply wiring layer. According to the embodiments of the present disclosure, at least the power consumption of the semiconductor structure can be reduced, and the integration level of the semiconductor structure can be improved.
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Inventors:
CHUANG LING-YI (CN)
LV KAIMIN (CN)
LV KAIMIN (CN)
Application Number:
PCT/CN2022/117386
Publication Date:
April 04, 2024
Filing Date:
September 06, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L25/18; H01L21/44; H01L23/48
Attorney, Agent or Firm:
BEIJING INTELLEGAL INTELLECTUAL PROPERTY AGENT LTD. (CN)
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