Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2019/090762
Kind Code:
A1
Abstract:
Provided is a method for forming gates (1100, 1300), containing forming a first patterned photoresist layer (310) on a substrate (200); forming spacer walls (510d, 510s) on the side wall of said first patterned photoresist layer (310), said spacer walls (510d, 510s) containing a curved part; removing the first patterned photoresist layer (310); forming an alternative photoresist layer (730) on the substrate (200), causing the spacer walls (510d, 510s) to be inserted in the alternative photoresist layer (730) and expose said curved part; removing the spacer walls (510d, 510s) so as to form openings (811d, 811s) in the alternative photoresist layer (730), said openings (811d, 811s) defining the size of the bottom of the gates (1100, 1300). Also contained is a gate (1100, 1300) structure formed according to the described method.
Inventors:
WU CHAN-SHIN (CN)
Application Number:
PCT/CN2017/110695
Publication Date:
May 16, 2019
Filing Date:
November 13, 2017
Export Citation:
Assignee:
WU CHAN SHIN (CN)
International Classes:
H01L29/772; H01L21/28
Foreign References:
| US20060220065A1 | 2006-10-05 | |||
| CN101022129A | 2007-08-22 | |||
| US4889827A | 1989-12-26 | |||
| CN101542685A | 2009-09-23 | |||
| CN104851788A | 2015-08-19 | |||
| US20110180850A1 | 2011-07-28 |
Attorney, Agent or Firm:
WATSON & BAND INTELLECTUAL PROPERTY AGENT LTD. (CN)
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