Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2023/029399
Kind Code:
A1
Abstract:
Embodiments of the present application provide a semiconductor structure and a method for forming same. The method for forming a semiconductor structure comprises: providing a base, wherein the base comprises a substrate, a first semiconductor layer, and a second semiconductor layer formed in sequence; forming first isolation structures and a second isolation structure that are arranged at intervals in the base, wherein a source layer formed in the second semiconductor layer and a drain layer formed in the substrate are provided between adjacent two of the first isolation structures, the extension direction of the first isolation structures is a first direction, and the extension direction of the second isolation structure is a second direction; forming a channel layer in the first semiconductor layer, a through hole having an extension direction that is the same as the first direction being provided between the channel layer and each of adjacent two of the first isolation structures; and forming a gate structure in the through hole.
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Inventors:
SHAO GUANGSU (CN)
XIAO DEYUAN (CN)
HAN QINGHUA (CN)
QIU YUNSONG (CN)
BAI WEIPING (CN)
XIAO DEYUAN (CN)
HAN QINGHUA (CN)
QIU YUNSONG (CN)
BAI WEIPING (CN)
Application Number:
PCT/CN2022/077721
Publication Date:
March 09, 2023
Filing Date:
February 24, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
BEIJING SUPERSTRING ACADEMY OF MEMORY TECH (CN)
International Classes:
H01L21/336; H01L29/78
Foreign References:
| CN111211170A | 2020-05-29 | |||
| CN109841675A | 2019-06-04 | |||
| CN106298778A | 2017-01-04 | |||
| US20150349059A1 | 2015-12-03 | |||
| CN105206670A | 2015-12-30 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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