Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME
Document Type and Number:
WIPO Patent Application WO/2023/236281
Kind Code:
A1
Abstract:
Provided in the embodiments of the present disclosure are a semiconductor structure and a method for forming same. The method comprises: providing a semiconductor substrate, which comprises a plurality of active columns arranged at intervals; etching the active columns to form annular grooves, wherein the annular grooves do not expose top surfaces and bottom surfaces of the active columns; and forming first semiconductor layers in the annular grooves to form a semiconductor structure, wherein the band gap of the first semiconductor layers is less than that of the active columns.
Inventors:
TANG YI (CN)
Application Number:
PCT/CN2022/102507
Publication Date:
December 14, 2023
Filing Date:
June 29, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L29/08
Foreign References:
| CN114582808A | 2022-06-03 | |||
| CN101335241A | 2008-12-31 | |||
| CN102468181A | 2012-05-23 | |||
| CN103996713A | 2014-08-20 | |||
| US20130234240A1 | 2013-09-12 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
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