Title:
SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2022/028117
Kind Code:
A1
Abstract:
Provided by the present disclosure are a semiconductor structure and a method for forming the semiconductor structure. The semiconductor structure comprises: a substrate; an active region located in the substrate; and a gate trench that intersects the active region and divides the active region into at least one source region and two drain regions, wherein the source region comprises a first doped region and a first extended doped region below the first doped region.
Inventors:
XU YACHAO (CN)
Application Number:
PCT/CN2021/100088
Publication Date:
February 10, 2022
Filing Date:
June 15, 2021
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L27/108
Foreign References:
| CN110875254A | 2020-03-10 | |||
| CN107425072A | 2017-12-01 | |||
| CN208256618U | 2018-12-18 | |||
| US20120211813A1 | 2012-08-23 | |||
| CN101976669A | 2011-02-16 | |||
| US20160043136A1 | 2016-02-11 |
Attorney, Agent or Firm:
CHINA PAT INTELLECTUAL PROPERTY OFFICE (CN)
Download PDF: