Title:
SEMICONDUCTOR STRUCTURE PREPARATION METHOD, SEMICONDUCTOR STRUCTURE, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/094195
Kind Code:
A1
Abstract:
The present application provides a semiconductor structure preparation method, a semiconductor structure, and an electronic device, for use in solving the technical problem of poor temperature stability of a semiconductor structure. The semiconductor structure preparation method comprises: etching on a substrate to form a first cavity; forming heavily doped monocrystalline silicon in the first cavity by means of an epitaxial growth process, the substrate and the heavily doped monocrystalline silicon in the first cavity forming a doped silicon layer, wherein the doping concentration of the heavily doped monocrystalline silicon is greater than the doping concentration of other regions in the doped silicon layer; removing a mask structure and the heavily doped monocrystalline silicon located outside the first cavity to form a substrate having a flat surface; inverting the substrate and then bonding same to a lower silicon cap provided with a second cavity, and removing at least part of the substrate to form a flat surface, wherein the projection of the second cavity on the substrate in a thickness direction at least partially overlaps with the projection of the heavily doped monocrystalline silicon on the substrate; and removing at least part of the substrate. According to the present application, the frequency temperature stability of a semiconductor structure can be improved.
Inventors:
PANG WEI (CN)
YANG QINGRUI (CN)
YANG QINGRUI (CN)
Application Number:
PCT/CN2023/129754
Publication Date:
May 10, 2024
Filing Date:
November 03, 2023
Export Citation:
Assignee:
GUANGZHOU LEYI INVEST CO LTD (CN)
International Classes:
H03H3/02
Attorney, Agent or Firm:
LEADER PATENT & TRADEMARK FIRM (Bldg. A Winland International Center, No.32 Xizhimen North Stree, Haidian District Beijing 2, CN)
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