Title:
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/134016
Kind Code:
A1
Abstract:
The present disclosure relates to a semiconductor structure and a preparation method therefor. The method comprises: providing a substrate, a semiconductor device being formed on a first surface of the substrate; and forming a Peltier effect device on a second surface of the substrate, the Peltier effect device being used for decreasing the temperature of the semiconductor device, the second surface being arranged opposite to the first surface, a heat absorption end of the Peltier effect device approaching the first surface, and a heat discharging end of the Peltier effect device being away from the first surface. The temperature of the semiconductor device can be decreased by means of the Peltier effect device to eliminate the influence of a temperature generated during the operation of the semiconductor structure on the performance of the semiconductor structure. When the semiconductor structure is a memory device, the influence of the temperature on a unit storage duration is eliminated, the unit storage duration of the semiconductor structure is prolonged, the risk of storage failure is reduced, and the reliability of the semiconductor structure is improved.
Inventors:
CHANG HENG-CHIA (CN)
Application Number:
PCT/CN2022/082243
Publication Date:
July 20, 2023
Filing Date:
March 22, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
G05D23/20
Foreign References:
| CN105242715A | 2016-01-13 | |||
| CN107807690A | 2018-03-16 | |||
| CN110718624A | 2020-01-21 | |||
| CN109144137A | 2019-01-04 | |||
| CN113594345A | 2021-11-02 | |||
| CN113130731A | 2021-07-16 | |||
| US20050167801A1 | 2005-08-04 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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