Title:
SEMICONDUCTOR STRUCTURE AND PREPARATION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2023/245733
Kind Code:
A1
Abstract:
The present disclosure relates to a semiconductor structure and a preparation method therefor. The preparation method for the semiconductor structure comprises: providing a substrate, and forming, on the substrate, a semiconductor stack structure formed by alternately stacking first semiconductor layers and second semiconductor layers; patterning the semiconductor stack structure to form a plurality of unit structures extending along a first direction and distributed at intervals; removing portions, located in a first region, of the first semiconductor layers in the unit structures, such that portions of the second semiconductor layers located in the first region form capacitor supporting structures; and forming capacitors on the exposed surfaces of the capacitor supporting structures, each capacitor comprising a first electrode, a dielectric layer and a second electrode which are sequentially stacked in a direction away from the capacitor supporting structure, wherein the capacitors in the first region share a same second electrode. According to the present disclosure, three-dimensional stacking of storage units can be realized, and electrical properties of the semiconductor structure are ensured, thereby improving the reliability and production yield of the semiconductor structure.
Inventors:
SHAO GUANGSU (CN)
XIAO DEYUAN (CN)
QIU YUNSONG (CN)
XIAO DEYUAN (CN)
QIU YUNSONG (CN)
Application Number:
PCT/CN2022/104125
Publication Date:
December 28, 2023
Filing Date:
July 06, 2022
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/64
Foreign References:
| CN110957303A | 2020-04-03 | |||
| CN114582809A | 2022-06-03 | |||
| CN112216318A | 2021-01-12 | |||
| CN114121819A | 2022-03-01 | |||
| US20200312951A1 | 2020-10-01 |
Attorney, Agent or Firm:
ADVANCE CHINA IP LAW OFFICE (CN)
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