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Title:
SEMICONDUCTOR STRUCTURE PRODUCTION METHOD, SEMICONDUCTOR STRUCTURE INSPECTION METHOD, AND SEMICONDUCTOR STRUCTURE
Document Type and Number:
WIPO Patent Application WO/2018/168451
Kind Code:
A1
Abstract:
The present invention comprises a step for preparing a plate-like semiconductor structure and a step for inspecting the semiconductor structure, wherein the step for inspecting the semiconductor structure comprises: a step for measuring through detection of, by use of a two-dimensional detector, reflection light which is obtained when light emitted from a light source obliquely to the surface of the semiconductor structure is reflected or scattered at the surface, the measurement being performed at multiple locations at least within a prescribed range of the surface of the semiconductor structure, and for acquiring a reflection light distribution which is a distribution, with respect to the position of the detector, of integrated values obtained by integrating the intensity of the reflection light measured at the multiple locations; and a step for fitting the reflection light distribution using a multiple Gaussian function derived by at least adding a first Gaussian function and a second Gaussian function showing a wider distribution than the first Gaussian function, so as to acquire a parameter to the second Gaussian function as an index corresponding to the surface roughness of the semiconductor structure.

Inventors:
HORIKIRI FUMIMASA (JP)
Application Number:
PCT/JP2018/007393
Publication Date:
September 20, 2018
Filing Date:
February 28, 2018
Export Citation:
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Assignee:
SCIOCS CO LTD (JP)
SUMITOMO CHEMICAL CO (JP)
International Classes:
G01B11/30; G01N21/956; H01L21/66
Domestic Patent References:
WO2014038634A12014-03-13
Foreign References:
JPH01138404A1989-05-31
JP2011203245A2011-10-13
JP2016050944A2016-04-11
JPH06221811A1994-08-12
JPH03274407A1991-12-05
JP2014073918A2014-04-24
JP2016181534A2016-10-13
Attorney, Agent or Firm:
FUKUOKA Masahiro (JP)
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