Title:
SEMICONDUCTOR STRUCTURE, REDISTRIBUTION LAYER (RDL) STRUCTURE, AND MANUFACTURING METHOD THEREOF
Document Type and Number:
WIPO Patent Application WO/2020/103874
Kind Code:
A1
Abstract:
A redistribution layer (RDL) structure, a manufacturing method thereof, and a semiconductor structure having the same. The RDL structure includes an RDL(105), disposed on a substrate(111), and including a bond pad portion(104) and a wire portion(103) connected to the bond pad portion(104), where a thickness of the bond pad portion(104) is greater than a thickness of the wire portion(103). Because a bond pad portion(104) has a thickness greater than a wire portion(103), so that the thicker bond pad portion(104) can provide more impact buffer areas in gold or copper wire bonding of packaging to prevent a substrate from breaking due to a stress, and prevent an increase in a parasitic capacitance between wires.
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Inventors:
WU PING-HENG (CN)
HSU WEN HAO (CN)
HSU WEN HAO (CN)
Application Number:
PCT/CN2019/119759
Publication Date:
May 28, 2020
Filing Date:
November 20, 2019
Export Citation:
Assignee:
CHANGXIN MEMORY TECH INC (CN)
International Classes:
H01L23/485
Foreign References:
| CN209216954U | 2019-08-06 | |||
| CN1901161A | 2007-01-24 | |||
| US20090224402A1 | 2009-09-10 | |||
| US20020056741A1 | 2002-05-16 | |||
| US20080111230A1 | 2008-05-15 | |||
| US20080012132A1 | 2008-01-17 | |||
| CN207852664U | 2018-09-11 |
Attorney, Agent or Firm:
SHANGHAI SAVVY INTELLECTUAL PROPERTY AGENCY (CN)
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