Title:
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2014/192227
Kind Code:
A1
Abstract:
This semiconductor substrate is characterized by including a silicon substrate, a buffer layer provided on the silicon substrate and comprising a boron-containing, nitride-based semiconductor, and an active layer formed on the buffer layer, wherein the boron concentration in the buffer layer gradually decreases from the silicon-based substrate towards the active layer. By this means, a semiconductor substrate is provided in which the buffer layer contains sufficient boron to obtain a transition suppressing effect, but the boron does not diffuse to the active layer.
Inventors:
SHIKAUCHI HIROSHI (JP)
SATO KEN (JP)
GOTO HIROKAZU (JP)
SHINOMIYA MASARU (JP)
TSUCHIYA KEITARO (JP)
HAGIMOTO KAZUNORI (JP)
SATO KEN (JP)
GOTO HIROKAZU (JP)
SHINOMIYA MASARU (JP)
TSUCHIYA KEITARO (JP)
HAGIMOTO KAZUNORI (JP)
Application Number:
PCT/JP2014/002403
Publication Date:
December 04, 2014
Filing Date:
May 02, 2014
Export Citation:
Assignee:
SANKEN ELECTRIC CO LTD (JP)
SHINETSU HANDOTAI KK (JP)
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/205; H01L21/338; H01L29/778; H01L29/812
Foreign References:
| JP2013074211A | 2013-04-22 | |||
| JP2012178467A | 2012-09-13 | |||
| JP2007242853A | 2007-09-20 |
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (JP)
Good Miya Mikio (JP)
Good Miya Mikio (JP)
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