Title:
SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2012/020565
Kind Code:
A1
Abstract:
Provided is a semiconductor substrate which comprises a base substrate and a first crystal layer that is formed on or above the base substrate. The first crystal layer is a group 3-5 compound semiconductor layer that contains a first atom which is at least one atom selected from the group consisting of an oxygen atom and a silicon atom and a second atom which is at least one atom that functions as an acceptor. The semiconductor substrate may additionally comprise an inhibition layer that is formed on or above the base substrate. The inhibition layer has an opening and inhibits crystal growth. The inhibition layer contains the first atom, and the first crystal layer is formed in the opening.
Inventors:
SAZAWA HIROYUKI (JP)
HATA MASAHIKO (JP)
HATA MASAHIKO (JP)
Application Number:
PCT/JP2011/004506
Publication Date:
February 16, 2012
Filing Date:
August 09, 2011
Export Citation:
Assignee:
SUMITOMO CHEMICAL CO (JP)
SAZAWA HIROYUKI (JP)
HATA MASAHIKO (JP)
SAZAWA HIROYUKI (JP)
HATA MASAHIKO (JP)
International Classes:
H01L21/338; H01L21/20; H01L21/205; H01L29/778; H01L29/812
Foreign References:
| JP2000311903A | 2000-11-07 | |||
| JP2002299253A | 2002-10-11 | |||
| JP2010171032A | 2010-08-05 | |||
| JP2002261032A | 2002-09-13 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
Ryuka international patent business corporation (JP)
Ryuka international patent business corporation (JP)
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