Title:
SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/1999/009585
Kind Code:
A1
Abstract:
An MOS transistor comprises an SiC semiconductor substrate (11) on which a thin Si film (13) is formed through epitaxial growth. A source electrode (38) and a drain electrode (34) are provided such that the SiC substrate (12) is in an output current path. A semiconductor device having high breakdown strength and large current capacity can be fabricated.
Inventors:
KITABATAKE MAKOTO (JP)
Application Number:
PCT/JP1998/003577
Publication Date:
February 25, 1999
Filing Date:
August 11, 1998
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD (JP)
KITABATAKE MAKOTO (JP)
KITABATAKE MAKOTO (JP)
International Classes:
H01L21/04; H01L21/78; H01L29/24; H01L29/78; H01L29/267; (IPC1-7): H01L21/20; H01L21/203; H01L21/205; H01L21/336; H01L29/73; H01L29/78
Foreign References:
| JPH09172159A | 1997-06-30 | |||
| JPS6319869A | 1988-01-27 | |||
| JPH023931A | 1990-01-09 | |||
| JPH0851110A | 1996-02-20 | |||
| JPH09181355A | 1997-07-11 | |||
| JPS62216217A | 1987-09-22 | |||
| JPH0982643A | 1997-03-28 |
Other References:
See also references of EP 0971394A4
Attorney, Agent or Firm:
Ohmae, Kaname (Uchihiranomachi 2-chome Chuo-ku, Osaka-shi Osaka, JP)
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