SEMICONDUCTOR SUBSTRATE AND ELECTRONIC DEVICE

Title:

SEMICONDUCTOR SUBSTRATE AND ELECTRONIC DEVICE

Document Type and Number:

WIPO Patent Application WO/2018/123664

Kind Code:

A1

Abstract:

The present invention provides a semiconductor substrate having: a substrate; a nitride crystal layer comprising a single layer or multiple crystal layers of a group III nitride; and a cap layer. The substrate, the nitride crystal layer, and the cap layer are positioned in the order of the substrate, the nitride crystal layer, and the cap layer, and the cap layer is a silicon nitride layer having crystallinity and has a thickness of at least 5 nm. In addition, the present invention provides a semiconductor substrate in which a layer in contact with the cap layer of the nitride crystal layer and a layer in the vicinity thereof function as active layers of a field effect transistor, and the cap layer is a silicon nitride layer having crystallinity and has a thickness equal to or greater than a thickness for embedding a gate of the field effect transistor.

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Inventors:

YAMAMOTO TAIKI (JP)
OSADA TAKENORI (JP)

Application Number:

PCT/JP2017/045166

Publication Date:

July 05, 2018

Filing Date:

December 15, 2017

Export Citation:

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Assignee:

SUMITOMO CHEMICAL CO (JP)

International Classes:

H01L21/338; H01L21/31; H01L21/318; H01L21/336; H01L29/778; H01L29/78; H01L29/812

Foreign References:

JP2015513793A	2015-05-14
JP2016207818A	2016-12-08
JP2015046441A	2015-03-12
JP2013225621A	2013-10-31

Other References: