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Patent Searching and Data


Title:
SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR ELEMENT
Document Type and Number:
WIPO Patent Application WO/2015/159481
Kind Code:
A1
Abstract:
A semiconductor substrate of the present invention has: a substrate; a buffer layer on the substrate, said buffer layer being formed of a carbon-containing nitride semiconductor; a high-resistance layer on the buffer layer, said high-resistance layer being formed of a carbon-containing nitride semiconductor; and a channel layer on the high-resistance layer, said channel layer being formed of a nitride semiconductor. The semiconductor substrate is characterized in that the high-resistance layer has: a first region having a carbon concentration lower than that of the buffer layer; and a second region, which is provided between the first region and the channel layer, and which has a carbon concentration higher than that of the first region. Consequently, a leak current is reduced by improving crystallinity, while maintaining the high resistance of the high-resistance layer, and crystallinity of the channel layer formed on the high-resistance layer is also increased, thereby providing the semiconductor substrate wherein deterioration of electron mobility and generation of current collapse in the channel layer are suppressed.

Inventors:
SATO KEN (JP)
SHIKAUCHI HIROSHI (JP)
GOTO HIROKAZU (JP)
SHINOMIYA MASARU (JP)
HAGIMOTO KAZUNORI (JP)
TSUCHIYA KEITARO (JP)
Application Number:
JP2015/001371
Publication Date:
October 22, 2015
Filing Date:
March 12, 2015
Export Citation:
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Assignee:
SANKEN ELECTRIC CO LTD (JP)
SHINETSU HANDOTAI KK (JP)
International Classes:
H01L21/338; H01L29/778; H01L29/812
Foreign References:
JP2011082494A2011-04-21
JP2014049674A2014-03-17
JP2008205146A2008-09-04
JP2015053328A2015-03-19
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (JP)
Good Miya Mikio (JP)
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