Title:
SEMICONDUCTOR SUBSTRATE ETCHING METHOD AND PRODUCTION METHOD FOR CAPACITIVE MEMS SENSOR
Document Type and Number:
WIPO Patent Application WO/2012/005292
Kind Code:
A1
Abstract:
Disclosed is a semiconductor substrate etching method that selectively etches a set etching region on a semiconductor substrate and which includes: a step which forms in the etching region a plurality of first concave sections with the same opening shape and size, by deep reactive ion etching in a predetermined pattern from a plurality of locations in the etching region; and a step which forms in the etching region a second concave section wherein the plurality of first concave sections are combined, by isotropic etching to remove the side walls of the semiconductor which partition the plurality of first concave sections.
Inventors:
NAKATANI, Goro (21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto-sh, Kyoto 85, 〒6158585, JP)
Application Number:
JP2011/065481
Publication Date:
January 12, 2012
Filing Date:
July 06, 2011
Export Citation:
Assignee:
ROHM CO., LTD. (21 Saiin Mizosaki-cho, Ukyo-ku Kyoto-sh, Kyoto 85, 〒6158585, JP)
ローム株式会社 (〒85 京都府京都市右京区西院溝崎町２１番地 Kyoto, 〒6158585, JP)
ローム株式会社 (〒85 京都府京都市右京区西院溝崎町２１番地 Kyoto, 〒6158585, JP)
International Classes:
G01C19/56; B81C1/00; H01L21/3065; H01L29/78; H01L29/84
Attorney, Agent or Firm:
INAOKA, Kosaku et al. (Sun Mullion NBF Tower 21st Floor, 6-12, Minamihommachi 2-chome, Chuo-ku, Osaka-sh, Osaka 54, 〒5410054, JP)
Claims: