Title:
SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, COMPOSITION, AND COMPOUND
Document Type and Number:
WIPO Patent Application WO/2023/199851
Kind Code:
A1
Abstract:
Provided are: a semiconductor substrate manufacturing method using a resist underlayer film-forming composition from which it is possible to form a film having excellent etching resistance, heat resistance, and bending resistance; a composition; and a compound. This semiconductor substrate manufacturing method comprises a step for directly or indirectly applying a resist underlayer film-forming composition on a substrate, a step for directly or indirectly forming a resist pattern on the resist underlayer film formed in the application step, and a step for performing etching by using the resist pattern as a mask. The resist underlayer film-forming composition contains a solvent and a compound represented by formula (1). (In formula (1), Ar1, Ar2, Ar3, and Ar4 each represent a substituted or unsubstituted monovalent group having an aromatic ring with 5-40 ring members, and at least one thereof has a group represented by formula (1-1) or (1-2).) (In formulae (1-1) and (1-2), Ar5, Ar6, and Ar7 each represent a substituted or unsubstituted aromatic ring that has 6-20 ring members and that forms a fused ring structure.)
Inventors:
NAGANAWA ATSUKO (JP)
YAMADA SHUHEI (JP)
KATAGIRI TAKASHI (JP)
ABE SHINYA (JP)
NAKATSU HIROKI (JP)
MIYAUCHI HIROYUKI (JP)
YAMADA SHUHEI (JP)
KATAGIRI TAKASHI (JP)
ABE SHINYA (JP)
NAKATSU HIROKI (JP)
MIYAUCHI HIROYUKI (JP)
Application Number:
PCT/JP2023/014339
Publication Date:
October 19, 2023
Filing Date:
April 07, 2023
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
C07C13/547; G03F7/11; C07C33/36; C07C39/17; C07C39/23; C07C43/215; C07D207/335; C07D209/14; C07D333/18; C07F5/02; C07F7/08; C07F7/18
Foreign References:
| KR20150093995A | 2015-08-19 | |||
| KR20090041999A | 2009-04-29 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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