Title:
SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD, AND RESIST BASE FILM FORMING COMPOSITION
Document Type and Number:
WIPO Patent Application WO/2022/244682
Kind Code:
A1
Abstract:
The purpose of the present invention is to provide a manufacturing method of a semiconductor substrate that uses a resist underlayer film forming composition that can form a resist underlayer film with excellent pattern rectangularity, and to provide a resist underlayer film forming composition. This semiconductor substrate manufacturing method involves a step for coating a substrate directly or indirectly with a resist underlayer film forming composition, a step for coating the resist underlayer film, formed in the resist underlayer film forming composition coating step, with a resist film forming composition, a step for exposing the resist film formed in the resist film forming composition coating step with radiation, and a step for developing at least the exposed resist layer, wherein the resist underlayer film forming composition contains a polymer, an acid generator, and a solvent, and the thickness of the resist underlayer film is less than or equal to 6 nm.
Inventors:
YONEDA EIJI (JP)
ABE TAKAYOSHI (JP)
MIYAUCHI HIROYUKI (JP)
ABE TAKAYOSHI (JP)
MIYAUCHI HIROYUKI (JP)
Application Number:
PCT/JP2022/020145
Publication Date:
November 24, 2022
Filing Date:
May 13, 2022
Export Citation:
Assignee:
JSR CORP (JP)
International Classes:
G03F7/11; G03F7/004; G03F7/20; G03F7/26; G03F7/32; H01L21/027
Domestic Patent References:
| WO2020226141A1 | 2020-11-12 |
Foreign References:
| JP2021051292A | 2021-04-01 |
Attorney, Agent or Firm:
UNIUS PATENT ATTORNEYS OFFICE (JP)
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