Title:
SEMICONDUCTOR SUBSTRATE, MEHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, DEVICE FOR PRODUCING SEMICONDUCTOR SUBSTRATE, ELECTRONIC COMPONENT, AND ELECTRONIC DEVICE
Document Type and Number:
WIPO Patent Application WO/2022/145453
Kind Code:
A1
Abstract:
This semiconductor substrate is provided with: a base substrate; a mask layer having an opening part and a mask part; and a GaN-based semiconductor layer containing a GaN-based semiconductor. The GaN-based semiconductor layer has: a first section positioned on the mask part; and a second section which is positioned on the opening part and in which the dislocation density of non-threading dislocations is lower than in the first section in a cross section obtained by cutting the GaN-based semiconductor layer in the thickness direction.
Inventors:
KAMIKAWA TAKESHI (JP)
MASAKI KATSUAKI (JP)
HAYASHI YUICHIRO (JP)
KOBAYASHI TOSHIHIRO (JP)
MASAKI KATSUAKI (JP)
HAYASHI YUICHIRO (JP)
KOBAYASHI TOSHIHIRO (JP)
Application Number:
PCT/JP2021/048833
Publication Date:
July 07, 2022
Filing Date:
December 28, 2021
Export Citation:
Assignee:
KYOCERA CORP (JP)
International Classes:
C30B25/04; C23C16/04; C23C16/34; C30B25/18; C30B29/38; H01L21/205
Foreign References:
| JP2012114263A | 2012-06-14 | |||
| JP2013251304A | 2013-12-12 | |||
| JP2004336040A | 2004-11-25 | |||
| JP2001230410A | 2001-08-24 | |||
| JP2013251304A | 2013-12-12 | |||
| JP2011066398A | 2011-03-31 |
Other References:
A.USUIH.SUNAKAWAA. SASAKIA.YAMAGUCHI: "Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy", JAPANESE JOURNAL OF APPLIED PHYSICS, vol. 36, no. 7B, 15 July 1997 (1997-07-15), pages L899 - L902
Attorney, Agent or Firm:
HARAKENZO WORLD PATENT & TRADEMARK (JP)
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