Title:
SEMICONDUCTOR SUBSTRATE, METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE, AND VERTICAL-CAVITY SURFACE-EMITTING LASER
Document Type and Number:
WIPO Patent Application WO/2012/056648
Kind Code:
A1
Abstract:
Provided is a semiconductor substrate for a vertical-cavity surface-emitting laser, which comprises a p-type crystalline layer, and wherein the p-type crystalline layer is composed of a 3-5 group compound semiconductor, comprises carbon atoms as p-type impurity atoms, and comprises hydrogen atoms with a concentration of not less than 6 × 1017 cm-3 and not more than 6 × 1019 cm-3.
Inventors:
ICHIKAWA OSAMU (JP)
Application Number:
PCT/JP2011/005822
Publication Date:
May 03, 2012
Filing Date:
October 18, 2011
Export Citation:
Assignee:
SUMITOMO CHEMICAL CO (JP)
ICHIKAWA OSAMU (JP)
ICHIKAWA OSAMU (JP)
International Classes:
H01S5/183; H01L21/205; H01S5/343
Foreign References:
| JP2002208755A | 2002-07-26 | |||
| JP2000049094A | 2000-02-18 | |||
| JPH03110829A | 1991-05-10 | |||
| JP2002083816A | 2002-03-22 | |||
| JP2004207549A | 2004-07-22 | |||
| JPH10261839A | 1998-09-29 | |||
| JP2005332881A | 2005-12-02 | |||
| JP2003249720A | 2003-09-05 |
Attorney, Agent or Firm:
RYUKA IP LAW FIRM (JP)
Ryuka international patent business corporation (JP)
Ryuka international patent business corporation (JP)
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Claims: